IRFZ44N N-channel Hexfet Power Mosfet 55V 49A 94W 17.5mΩ TO-220
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Third Generation HEXFETs from IR provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Features
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· 175°C Operating Temperature
· Fully Avalanche Rated
Τιμή: 1.50 €
Web Design by: Olon Systems