RJP30H2A N-CHANNEL IGBT 360V 35A 60W RENESAS TO-263-3
General Description
The RJP30H2A is silicon n-channel IGBT suitable for high speed power switching.
Features
· Trench gate and thin wafer technology (G6H-II series)
· Low collector to emitter saturation voltage: VCE(sat)= 1.4V typical
· High speed switching: tf= 100ns typical, tf= 180ns typical
· Low leak current: ICES= 1mA (max)
Τιμή: 4.00 €
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