STP100N8F6 N-channel Power Mosfet 80V 100A 176W 8mΩ TO-220
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Features
· Very low on-resistance
· Very low gate charge
· High avalanche ruggedness
· Low gate drive power loss
Applications
· Switching applications
Τιμή: 2.80 €
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