Κωδικός: STP 4NB100

STP4NB100 P4NB100 N-CHANNEL MOSFET 1000V 3.8A 125W 4Ω TO-220

STP4NB100 N-channel PowerMESH^TM MOSFET 1000V 3.8A 125W 4Ω TO-220

Description

Using the latest high voltage MESH OVERLAY^TM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Features

·          Extremely high dv/dt capability

·          100% avalanche tested

·          Very low intrinsic capacitances

·          Gate charge minimized

Applications

·          High current, high speed switching

·          Switch mode power supplies (SMPS)

·          DC-AC converters for welding equipment and uninterruptible power supplies and motor drive

Μονάδα μέτρησης: Τεμάχιο

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