Κωδικός: 2SC 2166

2SC2166 C2166 NPN TR 75V 4A 12.5W 27MHz TO-220

2SC2166 NPN EPITAXIAL PLANAR TR 75V 4A 12.5W 27MHz TO-220

 

DESCRIPTION

2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.

 

FEATURES

·          High power gain: G_PE ≥ 13.8 dB @ V_CC = 12 V, P_O = 6 W, f = 27 MHz.

·          Emitter ballasted construction for high reliability and good performance.

·          TO-220 similar package is combinient for mounting.

 

APPLICATIONS

·          3 to 4 watts output power amplifiers in HD band mobile radio applications.

 

ELECTRICAL CHARACTERISTICS

·          Maximum Collector Power Dissipation (P_C): 12 W

·          Maximum Collector-Base Voltage |V_cb|: 75 V

·          Maximum Collector-Emitter Voltage |V_ce|: 75 V

·          Maximum Emitter-Base Voltage |V_eb|: 5 V

·          Maximum Collector Current |I_{C max}|: 4 A

·          Maximum Operating Junction Temperature (T_j): 150 ^oC

·          Transition Frequency (f_t): 27 MHz

·          Forward Current Transfer Ratio (hFE)_MIN: 35

 

Σε απόθεμα